PVA BRUSH
Optimal Solution for Controlling Contamination Defects in Semiconductor Wafers
Product Introduction
PVA BRUSH
PVA BRUSH
In the semiconductor industry, where no impurity can be tolerated, addressing contamination defects that occur after the CMP process is crucial for yield improvement. At the heart of this solution is the functional PURIENCE PVA Brush.
Product Brochure
PVA Brush Features
High elasticity when wetted
Capability to manufacture various brush shapes
Adjustable pore size
Excellent mechanical properties and wear resistance
Strong resistance to sunlight and UV radiation
Heat resistance up to 80°C in wet conditions and 120°C in dry conditions
No dust generation
Absorbs 12–18 times its weight in moisture
Pores connected in an open-cell structure
8inch PVA brush
NO.
Product Name
Diameter
Inner Diameter
Length
IC70-AM31-H218-P
PURIENCE-70-31-BRUSH-AMAT_P
70
31
218
MC60-ON32-H241
PURIENCE-60-32-BRUSH-ONTRAK
60
32
241
MC60-UN32-H254-P
PURIENCE-60-32-BRUSH-UNIPLA_P
60
32
254
IC60-ON32-H241-P
PURIENCE-60-32-BRUSH-ONTRAK_P
60
32
241
MC38-EB18-H218
PURIENCE-38-18-BRUSH-EBARA
38
18
218
MC38-EB018-H218
PURIENCE-38-18-BRUSH-EBARA0
38
18
218
12inch PVA brush
NO.
Product Name
Diameter
Inner Diameter
Length
IC70-AL31-H318-C
PURIENCE-70-31-BRUSH-AMAT-LK_C
70
31
318
MC70-AL31-H319-P
PURIENCE-70-31-BRUSH-AMAT-LK_PC
70
31
319
IC70-AL31-H319-P
PURIENCE-70-31-BRUSH-AMAT-LK_PS
70
31
319
IC60-EX32-H309
PURIENCE-60-32-BRUSH-EBARA-X_S
60
32
309
MC60-EX32-H309
PURIENCE-60-32-BRUSH-EBARA-X_C
60
32
309
MC38-ESS18-H310
PURIENCE-38-18-BRUSH-EBARA-S2
38
18
310
PHYSICAL PROPERTY
Specifications
200MM(8inch)
300MM(12inch)
Image
Average Pore Size (µm)
25㎛,96㎛
80㎛
Porosity (%)
88-90%
90%
Moisture Absorption Rate (%)
700-1100%
817%
True density (g/cm3)
1.2436g/cm3
1.3016g/cm3
CHEMICAL RESISTANCE
Chemical
Consertration
Chemical
Concentration
Acetic acid
<3%
Isopropanol
<8%
Acetone
<20%
Methyl ethyl ketone
<10%
Ammonium hydroxide
<20%
Methanol
<20%
Citric acid
<10%
Phosphoric acid
<5%
EDTA
<10%
Sodium hydroxide
<5%
Ethanol
<10%
Sulfuric acid
<5%
Hydrochloric acid
<3%
Tetrahydrofuran
Attacked
Hydrofluoric acid
<5%
Xylene
Slight hardening
Hydrogen peroxide
<5%
-
-
CONTAMINATION
Ion
Concentration(ppb)
Br-
<0.5
Cl-
<0.7
F-
<0.5
NO3-
<0.5
SO42-
<0.5
Na+
<0.5
Li+
<0.2
K+
<0.5
Ca2+
<0.5
Mg2+
<0.2
Ion
Concentration(ppb)
Li
0.02
Na
0.02
K
0.02
Mg
0.02
Ca
0.03
Al
0.005
Cu
0.005
W
0.005
Cr
0.009
Fe
0.009
3D RENDERING ANALYSIS
We offer high-resolution internalstructural analysis using Micro-CT imaging.
